VLSI TECHNOLOGY (MEVD-201)

META TAGS:-RGPV VLSI DESIGN 2ND SEM SYLLABUS I RGTU VLSI DESIGN M.TECH SYLLABUS I RGPV M.TECH VLSI DESIGN SYLLABUS I RGTU M.E. VLSI DESIGN SYLLABUS I RGPV M.TECH MICRO ELECTRONICS AND VLSI DESIGN SYLLABUS I RGPV M.TECH VLSI DESIGN  VLSI TECHNOLOGY SYLLABUS I M.TECH VLSI DESIGN SYLLABUS I VLSI TECHNOLOGY SYLLABUS I M.TECH 2ND SEM VLSI TECHNOLOGY SYLLABUS I RGTU M.TECH 2ND SEM VLSI TECHNOLOGY SYLLABUS

Rajiv Gandhi Technological University, Bhopal (MP)

M.E./ M.Tech. Embeded System and VLSI Design SVITS(INDR)

MEVD – 201 VLSI TECHNOLOGY

UNIT  I

Overview of Semiconductor Processing:Electronic grade silicon preparation,Crystal growth,Czochralski process,wafer-preparation ,slicing,Marking, polishing,evaluation. Basic wafer fabrication operations,wafer sort,clean room construction and maintenance.

UNIT II

Oxidation:Objectives,Silicon dioxide layer uses,Thermal oxidation mechanism and methods, Kinetics of oxidation,Deal Grove model,Oxidation processes,post oxidation evaluation.

UNIT III

Basic Patterning: Overview of Photo-masking process, Ten step process, Basic photoresist chemistry, comparison of positive and negative photoresists, X-ray lithography, Electron beam exposure system.

UNIT IV

Doping:Definition of a junction, Formation of doped region and junction by diffusion, diffusion process steps,deposition,drive-in-oxidation,Ion implantation -concept and system, implant damage,Comparison of diffusion and ion-implantation techniques.

UNIT V

Deposition:Chemical Vapor Deposition (CVD), CVD Process steps,CVD System types, Low- Pressure CVD (LPCVD),Plasma-enhanced CVD (PECVD),Vapor Phase Epitaxy (VPE), Molecular Beam Epitaxy (MBE), Metalorganic CVD (MOCVD),SOS (Silicon on Sapphire) and SOI (silicon on Insulator).Brief Introduction to Metallization.

TEXT / REFERENCE BOOKS:

• S.M. Sze, VLSI Technology, McGraw-Hill, 2nd Ed.

• S. K. Gandhi, VLSI Fabrication Principles, Wiley

• W. R. Runyan, Silicon Semiconductor Technology, McGraw-Hill.