META TAGS: RGPV EC-304 SYLLABUS I DOWNLOAD ELECTRONIC DEVICE SYLLABUS I RGPV EC-304 SYLLABUS I RGPV 3RD SEM ED SYLLABUS I RGPV ELECTRONIC DEVICES 3RD SEM SYLLABUS I RGPV ELECTRONICS AND COMMUNICATION 3RD SEM SYLLABUS I RGPV EC 3RD SEM EC-304 SYLLABUS I RGPV EC 2ND YEAR SYLLABUS I RGPV ELECTRONIC DEVICES EC-304 SYLLABUS I RGU ELECTRONICS 3RD SEM SYLLABUS I RGPV ECE 3RD SEM ELECTRONICS DEVICES SYLLABUS
Rajiv Gandhi Proudhyogiki Vishwavidyalaya, BhopalBachelor of Engineering B.E. (ELECTRONICS AND COMMUNICATION)
ELECTRONICS DEVICES (EC-304)
UNIT I
Semiconductor intrinsic and extrinsic, p-type and n-type, energy band diagrams,majority and minority carrier,charge density in semiconductor, generation and recombination of charges, process of diffusion, diffusion and drift currents, Hall effects and its applications. p-n junction, depletion layer,potential barrier, electric field, forward and reverse biased junction, current components in p-n diode,current equation, V-I characteristics, cut in voltages of Si and Ge diode, transition and diffusion capacitance, power dissipation, p-n junction diode as rectifier, clipper and clamper .
UNIT II
Optoelectronic and miscellaneous devices:Characteristics and application of Zener diode, Varactor diode, Schottky diode, Tunnel Diode, PIN diode, LED, photo conductor cells, photo diodes,solar cell, photo transistors, opto-couplers, thermistors, Seven segment displays.
UNIT III
Bipolar junction transistor – Construction,basic operation,current components and equation. CB, CE and CC-configuration, input and output characteristics, Early effect,region of operation- active, cutoff and saturation region, Ebers-Moll model, power dissipation in transistor (Pdmax rating), Uni-junction Transistor (UJT) : Principle of operation, characteristics.
UNIT IV:
FET construction- Construction,n channel and p channel, characteristics, parameters, equivalent model and voltage gain,Enhancement and depletion MOSFET & its characteristics, analysis of FET in various configuration.
UNIT V
Thyristor Family- Silicon Controlled Rectifier, V-I Characteristics, Transistor Analogy, Turn-On and Turn-Off Mechanism,Series and Parallel Combination of SCR,Protection Circuits. Introduction to Diac, Triac, Power MOSFET, IGBT and GTO.
REFERENCE BOOKS:
- Boylestad and Nashelsky : Electronic Devices and Circuit Theory, Pearson Education
- Millman and Halkias : Integrated electronics, TMH
- Graham Bell : Electronic Devices and Circuits , PHI
- Ned Mohan : Power electronics, John Wiley and Sons
- Sendra and Smith : Microelectronics, Oxford Press.
- Streetman : Electronic Devices, Pearson Education.
- Neamen Donald : Electronic Circuits Analysis and Design, TMH
- Salivahanan et al : Electronic Devices and Circuits, TMH
LIST OF EXPERIMENTS (EXPANDABLE):
All experiments (wherever applicable) should be performed through the following steps. Step 1: Circuit should be designed/ drafted on paper.
Step 2: The designed/drafted circuit should be simulated using Simulation S/W (TINA-V7/ PSPICE/ Labview/ CIRCUIT MAKER).
Step 3: The designed/drafted circuit should be tested on the bread board and compare the results with the simulated results.
Step 4: Thebread board circuit should be fabricated on PCB prepared on PCB machine.
- V-I characteristics of various Diodes (p-n, Zener, Varactor, schottky. Tunnel, Photodiode etc)
- Characteristics of Transistors (BJT and FET)
- Study of Power electronic devices (Diac, Triac, SCR, Power Mosfet, IGBT etc.)
